Lehrstuhl für Integrierte Elektronische Systeme

Issakov, Vadim

Ehemaliger Lehrstuhlleiter

Prof. Dr.-Ing. Vadim Issakov

Lehrstuhl für Elektronik
Vita

Vadim Issakov received the M.Sc. degree in microwave engineering from the TU Munich in 2006 and the Ph.D. degree (summa cum laude) from the University of Paderborn, Germany, in 2010. He received an award for the outstanding dissertation from the VDI/VDE in Germany and best dissertation award from the University of Paderborn.

In March 2010 he joined Infineon in Neubiberg, Germany. Afterwards he worked at IMEC, Belgium and at Intel Corporation, before he came back to Infineon in August 2015 as mm-wave Design Lead and Principal Engineer leading a research group working on pre-development of mm-wave radar and communication products.

His work has been recognized by the IEEE MTT Outstanding Young Engineer Award.

Since 2014 he was guest lecturer at the Ruhr-University Bochum and University of Erlangen, Germany.

In September 2019 he joined the University of Magdeburg, Germany, as a full professor holding the Chair for Electronics. His research interests include mm-wave circuits, RF systems, mm-wave measurement techniques and RF-ESD. He authored and co-authored over 90 papers in international journals and conference proceedings, 11 patents and published a book on mm-wave circuits for radar applications.

Publikationen

2020

Buchbeitrag

A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with −178 dBc/Hz FOMT

Breun, Sascha; Voelkel, Matthias; Schrotz, Albert-Marcel; Dietz, Marco; Issakov, Vadim; Weigel, Robert

In: 2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems / IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems , 2020 - Piscataway, NJ : IEEE, S. 39-42

Buchbeitrag

A fundamental-frequency 122 GHz radar transceiver with 5.3 dBm single-ended output power in a 130 nm SiGe Technology

Aguilar, Erick; Issakov, Vadim; Weigel, Robert

In: Proceedings of the 2020 IEEE/MTT-S International Microwave Symposium , 2020 - [Piscataway, NJ] : IEEE, S. 1215-1218

Buchbeitrag

Low power low phase noise 60 GHz multichannel transceiver in 28 nm CMOS for radar applications

Rimmelspacher, Johannes; Ciocoveanu, Radu; Steffan, Giovanni; Bassi, Matteo; Issakov, Vadim

In: Proceedings of the 2020 IEEE Radio Frequency Integrated Circuits Symposium , 2020 - [Piscataway, NJ] : IEEE, S. 19-22

Buchbeitrag

Fully autonomous system-on-board with complex permittivity sensors and 60 GHz transmitter for biomedical implant applications

Issakov, Vadim; Heine, Carl; Lammertz, Vincent; Stoegmueller, Johannes; Meindl, Manfred; Stubenrauch, Ulrich; Geissler, Christian

In: Proceedings of the 2020 IEEE Radio Frequency Integrated Circuits Symposium , 2020 - [Piscataway, NJ] : IEEE, S. 159-162

Buchbeitrag

Highly-integrated Scalable D-band receiver front-end modules in a 130 nm SiGe technology for imaging and radar applications

Aguilar, Erik; Issakov, Vadim; Weigel, Robert

In: 2020 German Microwave Conference / GeMiC , 2020 - [Piscataway, NJ] : IEEE, S. 68-71

Buchbeitrag

A 122 GHz ISM-Band FMCW radar transceiver

Lammert, Vincent; Achatz, Simon; Weigel, Robert; Issakov, Vadim

In: 2020 German Microwave Conference / GeMiC , 2020 - [Piscataway, NJ] : IEEE, S. 96-99

Buchbeitrag

Breast cancer imaging using a 24 GHz Ultra-Wideband MIMO FMCW radar - system considerations and first imaging results

Prati, Maria Virginia; Moll, Jochen; Kexel, Christian; Nguyen, Duy Hai; Santra, Avik; Aliverti, Andrea; Krozer, Viktor; Issakov, Vadim

In: 14th European Conference on Antennas and Propagation / EuCAP , 2020 - [Piscataway, NJ] : IEEE

Buchbeitrag

Extended equivalent circuit model for enhanced substrate modeling of three-port inductors

Breun, Sascha; Kehl-Waas, Sebastian; Issakov, Vadim

In: 2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems / IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems , 2020 - Piscataway, NJ : IEEE, S. 50-52

Buchbeitrag

Transformer-coupled D-Band PA with 11.8 dBm Psat and 6.3 % PAE in 0.13μm SiGe BiCMOS

Romstadt, Justin; Lammert, Vincent; Pohl, Niels; Issakov, Vadim

In: 2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems / IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems , 2020 - Piscataway, NJ : IEEE, S. 77-80

Buchbeitrag

A two-stage F-band cascode power amplifier with a peak PAE of 17% in SiGe BiCMOS technology

Kurz, Vera; Bilato, Andrea; Biebl, Erwin; Issakov, Vadim

In: 2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems / IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems , 2020 - Piscataway, NJ : IEEE, S. 81-83

Begutachteter Zeitschriftenartikel

SiRF 2021 [RWW 2021]

Issakov, Vadim

In: IEEE microwave magazine / Institute of Electrical and Electronics Engineers - Piscataway, NJ : IEEE, Bd. 21 (2020), Heft 12, S. 18

Begutachteter Zeitschriftenartikel

Towards embedded radcom-sensors in wind turbine blades - preliminary numerical and experimental studies

Simon, Jonas; Moll, Jochen; Krozer, Viktor; Kurin, Thomas; Lurz, Fabian; Weigel, Robert; Krause, Stefan W.; Bagemiel, Oliver; Nuber, Andreas; Issakov, Vadim

In: Progress in electromagnetics research. Letters - Cambridge, Mass. : EMW, Bd. 90 (2020), S. 61-67

Begutachteter Zeitschriftenartikel

A 130 GHz fully-integrated fundamental-frequency D-Band transmitter module with > 4 dBm single-ended output power

Aguilar, Erik; Issakov, Vadim; Weigel, Robert

In: IEEE transactions on circuits and systems / 2 / Institute of Electrical and Electronics Engineers - New York, NY : IEEE, Bd. 67 (2020), Heft 5, S. 906-910

Begutachteter Zeitschriftenartikel

Design of a 60 GHz 32% PAE Class-AB PA with 2nd harmonic control in 45-nm PD-SOI CMOS

Ciocoveanu, Radu; Weigel, Robert; Hagelauer, Amelie; Issakov, Vadim

In: IEEE transactions on circuits and systems / 1 / Institute of Electrical and Electronics Engineers - New York, NY : Institute of Electrical and Electronics Engineers, Bd. 67 (2020), Heft 8, S. 2635-2646

2019

Buchbeitrag

A 20.7% PAE 3-stage 60GHz power amplifier for radar applications in 28nm bulk CMOS

Ciocoveanu, Radu; Weigel, Robert; Hagelauer, Amelie; Issakov, Vadim

In: 2019 14th European Microwave Integrated Circuits Conference - [Piscataway, NJ] : IEEE, S. 156-159

Buchbeitrag

A 60 GHz 30.5% PAE differential stacked PA with second harmonic control in 45 nm PD-SOI CMOS

Ciocoveanu, Radu; Weigel, Robert; Hagelauer, Amelie; Issakov, Vadim

In: 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) / IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems , 2019 - Piscataway, NJ : IEEE

Buchbeitrag

Highly-integrated low-power 60 GHz multichannel transceiver for radar applications in 28 nm CMOS

Issakov, Vadim; Ciocoveanu, Radu; Weigel, Robert; Geiselbrechtinger, Angelika; Rimmelspacher, Johannes

In: 2019 IEEE MTT-S International Wireless Symposium - [Piscataway, NJ] : IEEE

Buchbeitrag

LC tank differential inductor-coupled dual-core 60 GHz push-push VCO in 45 nm RF-SOI CMOS technology

Rimmelspacher, Johannes; Weigel, Robert; Hagelauer, Amelie; Issakov, Vadim

In: 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) / IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems , 2019 - Piscataway, NJ : IEEE

Buchbeitrag

Systematic experimental fT and fmax comparison of 40-nm bulk CMOS versus 45-nm SOI technology

Rimmelspacher, Johannes; Werthof, Andreas; Weigel, Robert; Issakov, Vadim

In: 2019 14th European Microwave Integrated Circuits Conference - [Piscataway, NJ] : IEEE

Buchbeitrag

Highly-integrated <0.14mm2D -band receiver front-ends for radar and imaging applications in a 130 nm SiGe BiCMOS technology

Aguilar, Erick; Issakov, Vadim; Weigel, Robert

In: 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) / IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems , 2019 - Piscataway, NJ : IEEE

Buchbeitrag

Experimental considerations on accurate fT and fmax extraction for MOS transistors measured up to 110 GHz

Rimmelspacher, Johannes; Werthof, Andreas; Weigel, Robert; Geiselbrechtinger, Angelika; Issakov, Vadim

In: 2019 92nd ARFTG Microwave Measurement Conference (ARFTG) - [Piscataway, NJ] : IEEE

Begutachteter Zeitschriftenartikel

A K-band complex permittivity sensor for biomedical applications in 130-nm SiGe BiCMOS

Lammert, Vincent; Heine, Carl; Wessel, Jan R.; Jamal, F. I.; Kissinger, Dietmar; Geiselbrechtinger, Angelika; Issakov, Vadim

In: IEEE transactions on circuits and systems / 2 / Institute of Electrical and Electronics Engineers - New York, NY : IEEE, Bd. 66 (2019), Heft 10, S. 1628-1632

Begutachteter Zeitschriftenartikel

The state of the art in CMOS VCOs: Mm-Wave VCOs in advanced CMOS technology nodes

Issakov, Vadim

In: IEEE microwave magazine / Institute of Electrical and Electronics Engineers - Piscataway, NJ : IEEE, Bd. 20 (2019), Heft 12, S. 59-71

Begutachteter Zeitschriftenartikel

Modified Gilbert-Cell Mixer with an LO waveform shaper and switched gate-biasing for 1/f noise reduction in 28-nm CMOS

Ciocoveanu, Radu; Weigel, Robert; Hagelauer, Amelie; Issakov, Vadim

In: IEEE transactions on circuits and systems / 2 / Institute of Electrical and Electronics Engineers - New York, NY : IEEE, Bd. 66 (2019), Heft 10, S. 1688-1692

Begutachteter Zeitschriftenartikel

Analytical equivalent circuit extraction procedure for broadband scalable modeling of three-port center-tapped symmetric on-chip inductors

Issakov, Vadim; Kehl-Waas, Sebastian; Breun, Sascha

In: IEEE transactions on circuits and systems / 1 / Institute of Electrical and Electronics Engineers - New York, NY : Institute of Electrical and Electronics Engineers, Bd. 66 (2019), Heft 9, S. 3557-3570

Kooperationen
  • Friedrich-Alexander Universität Erlangen-Nürnberg
  • Infineon Technologies AG
  • Globalfoundries
  • Goethe Universität Frankfurt
  • Innovations for High Performance Microelectronics (IHP)
  • Keysight Technologies
  • Technische Universität Graz
  • Tomsk State University of Control Systems and Radioelectronics (TUSUR)
  • Università degli Studi di Padova
  • Technische Universität Hamburg-Harburg
  • Technische Universität Dresden
  • tti Technologietransfer und Innovationsförderung GmbH Magdeburg
  • Universität Bayreuth
Forschungsprofil
- mm-Wave Circuit Design in silicon-based technologies (CMOS, SiGe)
- analog Circuits
- Systems on Chip and Systems in Package
- radar and communication systems concept engineering
- biomedical circuits and systems
- RF-ESD co-design
- mm-Wave modeling and characterization techniques
- electromagnetic modeling of packaging transitions
- chip/package/PCB co-design and co-optimization

Letzte Änderung: 13.10.2023 - Ansprechpartner: Webmaster