Lehrstuhl für Integrierte Elektronische Systeme

M.Sc. Sanaul Haque

Bild von Sanaul Haque
Wiss. Mitarbeiter/-in

M.Sc. Sanaul Haque

Universitätsplatz 2, 39106 Magdeburg, G09-330
Sanaul Haque holds a B.Sc. in Electrical and Electronic Engineering from Bangladesh University of Engineering and Technology (2012) and an M.Sc. in Communications Technology from the University of Ulm (2015).

In 2015, he began his professional career as an RF Design Engineer at eesy-ic GmbH, focusing on RF switch design and product development for cellular applications.

From 2017 to 2019, he served as a Senior Lecturer in the Department of Electrical and Electronic Engineering at East West University, delivering courses, mentoring students, and contributing to academic activities.

From 2020 to 2025, he worked as a Research Assistant at the Chair of Radio Frequency and Microwave Techniques, Brandenburg University of Technology, where his research focused on GaN-based C/Ka-band MMICs, including LNAs, PAs, switches, and half-duplex RFFE design for 5G applications.

Since 2026, he has been a Research Assistant at the Chair of Integrated Electronic Systems, Otto von Guericke University of Magdeburg, focusing on the monolithic integration of high-power TRx switches for MRI applications.

2025

Buchbeitrag

Linearity Enhancement of GaN LNA MMIC Using RF-Based Approach of Derivative Superposition

Haque, Sanaul; Doerner, Ralf; Chevtchenko, Serguei; Rudolph, Matthias

In: 2025 20th European Microwave Integrated Circuits Conference (EuMIC), IEEE, S. 25-28

2024

Buchbeitrag

Ka-Band GaN Power Amplifier with Integrated DC Supply Switch and RF Switch

Haque, Sanaul; Beleniotis, Petros; Yazdani, Hossein; Rudolph, Matthias

In: 2024 25th International Microwave and Radar Conference (MIKON), IEEE, S. 1-5

Switch Integrated Ka-Band Low Noise Amplifier in GaN/AlN HEMT Technology

Haque, Sanaul; Andrei, Cristina; Wolf, Mihaela; Hilt, Oliver; Rudolph, Matthias

In: 2024 19th European Microwave Integrated Circuits Conference (EuMIC), IEEE, S. 351-354

2023

Buchbeitrag

On the Survivability of a 28 - 32 GHz GaN Low Noise Amplifier

Haque, Sanaul; Andrei, Cristina; Yazdani, Hossein; Rudolph, Matthias

In: 2023 18th European Microwave Integrated Circuits Conference (EuMIC), IEEE, S. 17-20

Begutachteter Zeitschriftenartikel

Common-Gate LNA MMIC With Switching Feature Using GaN-HEMT for 5G RF Front-End

Krishnaji Rao, Megha; Doerner, Ralf; Chevtchenko, Serguei A.; Haque, Sanaul; Rudolph, Matthias

In: IEEE Microwave and Wireless Technology Letters, Institute of Electrical and Electronics Engineers (IEEE), Bd. 33, Heft 10, S. 1446-1449

2022

Buchbeitrag

Noise Modeling of GaN/AlN HEMT

Haque, Sanaul; Schnieder, Frank; Hilt, Oliver; Doerner, Ralf; Brunner, Frank; Rudolph, Matthias

In: 2021 16th European Microwave Integrated Circuits Conference (EuMIC), IEEE, S. 185-188

Begutachteter Zeitschriftenartikel

An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT

Beleniotis, Petros; Schnieder, Frank; Krause, Sascha; Haque, Sanaul; Rudolph, Matthias

In: International Journal of Microwave and Wireless Technologies, Cambridge University Press (CUP), Bd. 14, Heft 2, S. 134-142

Letzte Änderung: 09.01.2026 -
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